SIB911DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 8V

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Dual Supply Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Element Configuration :

Dual

Case Connection :

DRAIN

Nominal Vgs :

-1 V

Number of Terminations :

6

Radiation Hardening :

No

Fall Time (Typ) :

31 ns

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

1.5A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

-2.6A

Resistance :

295mOhm

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

1.1W

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

Input Capacitance (Ciss) (Max) @ Vds :

115pF @ 10V

Package / Case :

PowerPAK® SC-75-6L Dual

Rise Time :

45ns

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Pbfree Code :

yes

Termination :

SMD/SMT

Turn-Off Delay Time :

10 ns

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

2.6A

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-1V

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Turn On Delay Time :

12 ns

Pin Count :

6

Rds On (Max) @ Id, Vgs :

295m Ω @ 1.5A, 4.5V

Mount :

Surface Mount

Base Part Number :

SIB911

Lead Free :

Lead Free

Max Power Dissipation :

3.1W

Transistor Element Material :

SILICON