SIB914DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Package / Case :

PowerPAK® SC-75-6L Dual

Lead Free :

Lead Free

Height :

750μm

Number of Elements :

2

Base Part Number :

SIB914

REACH SVHC :

Unknown

Width :

1.6mm

Continuous Drain Current (ID) :

1.5A

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

800 mV

Gate to Source Voltage (Vgs) :

5V

Element Configuration :

Dual

Case Connection :

DRAIN

Turn-Off Delay Time :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

2.6nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

125pF @ 4V

Number of Channels :

2

Number of Terminations :

6

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

8V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

3.1W

Transistor Element Material :

SILICON

Pbfree Code :

yes

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

800mV @ 250μA

Rise Time :

7ns

Terminal Form :

C BEND

Number of Pins :

6

Threshold Voltage :

800mV

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

2 N-Channel (Dual)

Resistance :

113mOhm

Length :

1.6mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

113m Ω @ 2.5A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

4 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

7 ns

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Published :

2012

FET Feature :

Standard

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Weight :

95.991485mg

Mount :

Surface Mount

Power Dissipation :

1.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

8V