SIA950DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1.4V @ 250μA

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

3.8 Ω @ 360mA, 4.5V

Power Dissipation :

1.9W

Number of Elements :

2

Pbfree Code :

yes

Base Part Number :

SIA950

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

470mA

Radiation Hardening :

No

Pin Count :

6

Transistor Element Material :

SILICON

Package / Case :

PowerPAK® SC-70-6 Dual

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

25 ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

90pF @ 100V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2009

Drain Current-Max (Abs) (ID) :

0.47A

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

10 ns

Mount :

Surface Mount

Max Power Dissipation :

7W

Gate to Source Voltage (Vgs) :

16V

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Drain to Source Breakdown Voltage :

190V

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 10V

Terminal Finish :

MATTE TIN

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Rise Time :

15ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

950mA

Fall Time (Typ) :

15 ns

Series :

LITTLE FOOT®

Case Connection :

DRAIN