SIA911ADJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

116m Ω @ 2.8A, 4.5V

Gate to Source Voltage (Vgs) :

8V

Published :

2015

Drain to Source Voltage (Vdss) :

20V

Series :

TrenchFET®

Mount :

Surface Mount

Radiation Hardening :

No

Turn On Delay Time :

15 ns

Width :

2.05mm

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

750μm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 10V

Base Part Number :

SIA911

Max Power Dissipation :

6.5W

Peak Reflow Temperature (Cel) :

260

Package / Case :

PowerPAK® SC-70-6 Dual

Pulsed Drain Current-Max (IDM) :

8A

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

20 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Packaging :

Tape and Reel (TR)

FET Type :

2 P-Channel (Dual)

Length :

2.05mm

Element Configuration :

Dual

Mounting Type :

Surface Mount

Weight :

28.009329mg

Vgs(th) (Max) @ Id :

1V @ 250μA

Pin Count :

6

Rise Time :

45ns

Transistor Application :

SWITCHING

FET Feature :

Standard

Factory Lead Time :

14 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 8V

Number of Terminations :

6

Continuous Drain Current (ID) :

4.5A

Number of Elements :

2

Case Connection :

DRAIN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation :

1.8W

Number of Pins :

6

Fall Time (Typ) :

10 ns

Lead Free :

Lead Free