SIA913ADJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

-12V

Radiation Hardening :

No

Rise Time :

25ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4.5A

FET Feature :

Logic Level Gate

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Length :

2.05mm

Transistor Element Material :

SILICON

Element Configuration :

Dual

Weight :

28.009329mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

2.05mm

Package / Case :

PowerPAK® SC-70-6 Dual

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Max Power Dissipation :

6.5W

Turn-Off Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

20 ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Fall Time (Typ) :

25 ns

Published :

2016

Number of Channels :

2

Base Part Number :

SIA913

Number of Terminations :

6

Pin Count :

3

Drain to Source Voltage (Vdss) :

12V

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

4.5A

Rds On (Max) @ Id, Vgs :

61m Ω @ 3.6A, 4.5V

Mounting Type :

Surface Mount

JESD-30 Code :

S-XDSO-N6

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 6V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 8V

Drain-source On Resistance-Max :

0.061Ohm

Mount :

Surface Mount

Continuous Drain Current (ID) :

4.3A

Pbfree Code :

yes

Height :

750μm