SI8824EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

500mW Ta

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Ball

Threshold Voltage :

800mV

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Published :

2017

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

2.9A

DS Breakdown Voltage-Min :

20V

Factory Lead Time :

44 Weeks

Package / Case :

4-XFBGA

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Resistance :

60mOhm

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Vgs (Max) :

±5V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Series :

TrenchFET®

REACH SVHC :

Unknown

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

800mV @ 250μA

Rds On (Max) @ Id, Vgs :

75m Ω @ 1A, 4.5V