SI8810EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Rise Time :

12ns

Fall Time (Typ) :

7 ns

Published :

2016

Turn-Off Delay Time :

25 ns

Factory Lead Time :

21 Weeks

Power Dissipation-Max :

500mW Ta

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

900mV @ 250μA

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

72m Ω @ 1A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

245pF @ 10V

Number of Elements :

1

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 8V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Power Dissipation :

900mW

Mounting Type :

Surface Mount

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

2.1A

Package / Case :

4-XFBGA

Number of Pins :

4