SI8805EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Terminal Form :

Ball

Power Dissipation :

500mW

Factory Lead Time :

15 Weeks

Vgs(th) (Max) @ Id :

700mV @ 250μA

Turn-Off Delay Time :

25 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

500mW Ta

Rise Time :

13ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Fall Time (Typ) :

17 ns

Pin Count :

4

Series :

TrenchFET®

Package / Case :

4-XFBGA

DS Breakdown Voltage-Min :

8V

Radiation Hardening :

No

Continuous Drain Current (ID) :

-3.1A

Transistor Element Material :

SILICON

Published :

2017

Drain-source On Resistance-Max :

0.088Ohm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Element Configuration :

Single

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Number of Terminations :

4

Vgs (Max) :

±5V

Terminal Position :

BOTTOM

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

13 ns

Number of Channels :

1

Number of Elements :

1

Mount :

Surface Mount

Number of Pins :

4

Drain to Source Voltage (Vdss) :

8V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

68m Ω @ 1.5A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

5V