SI8821EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

30V

Number of Pins :

4

Lead Free :

Lead Free

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-600mV

Turn-Off Delay Time :

40 ns

REACH SVHC :

Unknown

Rise Time :

20ns

Number of Elements :

1

Fall Time (Typ) :

15 ns

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Form :

Ball

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Drain-source On Resistance-Max :

0.15Ohm

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

135m Ω @ 1A, 4.5V

ECCN Code :

EAR99

FET Type :

P-Channel

Factory Lead Time :

30 Weeks

Terminal Position :

BOTTOM

Mount :

Surface Mount

Number of Terminations :

4

Power Dissipation-Max :

500mW Ta

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Continuous Drain Current (ID) :

-2.3A

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Terminal Finish :

Pure Matte Tin (Sn)

Package / Case :

4-XFBGA, CSPBGA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 15V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Mounting Type :

Surface Mount