SI8816EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

109m Ω @ 1A, 10V

Packaging :

Cut Tape (CT)

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Turn-Off Delay Time :

20 ns

Published :

2015

Drain Current-Max (Abs) (ID) :

1.5A

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 15V

Fall Time (Typ) :

10 ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Vgs (Max) :

±12V

Number of Pins :

4

Threshold Voltage :

600mV

Pbfree Code :

yes

Element Configuration :

Single

Terminal Finish :

Pure Matte Tin (Sn)

Number of Elements :

1

REACH SVHC :

No SVHC

Turn On Delay Time :

15 ns

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Package / Case :

4-XFBGA

Power Dissipation-Max :

500mW Ta

Transistor Element Material :

SILICON

Factory Lead Time :

44 Weeks

Radiation Hardening :

No

FET Type :

N-Channel

Continuous Drain Current (ID) :

2.3A

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.123Ohm

Terminal Form :

Ball

Rise Time :

20ns

ECCN Code :

EAR99