SI8806DB-T2-E1
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- Mfr.Part #
- SI8806DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 4-XFBGA
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 4MICROFOOT
- Stock
- 1,300
- In Stock ：
- 1,300
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±8V
- Rise Time :
- 20ns
- Factory Lead Time :
- 44 Weeks
- Power Dissipation :
- 900mW
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 4-XFBGA
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 8V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 400mV
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 3.9A
- Series :
- TrenchFET®
- Height :
- 213μm
- Drain to Source Voltage (Vdss) :
- 12V
- ECCN Code :
- EAR99
- Width :
- 840μm
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Published :
- 2013
- Number of Pins :
- 4
- Length :
- 840μm
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 12 ns
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation-Max :
- 500mW Ta
- Terminal Finish :
- Matte Tin (Sn)
- Turn-Off Delay Time :
- 30 ns
- Element Configuration :
- Single
- Turn On Delay Time :
- 10 ns
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 1A, 4.5V
- Datasheets
- SI8806DB-T2-E1
N-Channel Tape & Reel (TR) 43m Ω @ 1A, 4.5V ±8V 17nC @ 8V 12V 4-XFBGA
SI8806DB-T2-E1 Overview
This device conducts a continuous drain current (ID) of 3.9A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 30 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has 400mV threshold voltage.This transistor requires a drain-source voltage (Vdss) of 12V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
SI8806DB-T2-E1 Features
a continuous drain current (ID) of 3.9A
the turn-off delay time is 30 ns
a threshold voltage of 400mV
a 12V drain to source voltage (Vdss)
SI8806DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8806DB-T2-E1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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