SI6983DQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Published :

2009

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Continuous Drain Current (ID) :

-5.4A

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Length :

3mm

Vgs(th) (Max) @ Id :

1V @ 400μA

Turn On Delay Time :

40 ns

Turn-Off Delay Time :

135 ns

Resistance :

24mOhm

Rise Time :

55ns

Min Operating Temperature :

-55°C

Base Part Number :

SI6983

Current - Continuous Drain (Id) @ 25°C :

4.6A

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Max Power Dissipation :

830mW

Number of Channels :

2

Width :

4.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

24mOhm @ 5.4A, 4.5V

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Height :

1mm

Mount :

Surface Mount

Fall Time (Typ) :

52 ns

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

24mOhm

Power - Max :

830mW

FET Feature :

Logic Level Gate

Rds On Max :

24 mΩ

Weight :

157.991892mg

Drain to Source Voltage (Vdss) :

20V

Supplier Device Package :

8-TSSOP