SI6975DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

830mW

Power Dissipation :

830mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

27mOhm @ 5.1A, 4.5V

Drain to Source Voltage (Vdss) :

12V

Number of Channels :

2

Fall Time (Typ) :

32 ns

Length :

3mm

Turn-Off Delay Time :

96 ns

Continuous Drain Current (ID) :

4.3A

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Drain to Source Resistance :

27mOhm

Published :

2016

Rise Time :

32ns

Mount :

Surface Mount

Width :

4.4mm

Number of Pins :

8

Height :

1mm

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Supplier Device Package :

8-TSSOP

Factory Lead Time :

21 Weeks

Weight :

157.991892mg

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Power - Max :

830mW

Drain to Source Breakdown Voltage :

-12V

Turn On Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Rds On Max :

27 mΩ

Vgs(th) (Max) @ Id :

450mV @ 5mA (Min)

Max Operating Temperature :

150°C

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

4.3A

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

8V

Min Operating Temperature :

-55°C