SI6973DQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

20V

Number of Elements :

2

Turn On Delay Time :

27 ns

Drain-source On Resistance-Max :

0.03Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Turn-Off Delay Time :

93 ns

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Series :

TrenchFET®

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Pin Count :

8

Mounting Type :

Surface Mount

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Number of Pins :

8

Power Dissipation :

830mW

Drain to Source Voltage (Vdss) :

20V

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

4.1A

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.8A, 4.5V

JESD-609 Code :

e3

Published :

2013

Fall Time (Typ) :

43 ns

Max Power Dissipation :

830mW

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Rise Time :

27ns

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)