SI6973DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

830mW

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 P-Channel (Dual)

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

8

Turn-Off Delay Time :

93 ns

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

20V

Series :

TrenchFET®

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

27 ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Turn On Delay Time :

27 ns

Drain to Source Resistance :

30mOhm

Rds On Max :

30 mΩ

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

30mOhm @ 4.8A, 4.5V

Supplier Device Package :

8-TSSOP

Power Dissipation :

830mW

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Radiation Hardening :

No

Rise Time :

27ns

Continuous Drain Current (ID) :

-4.1A

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Current - Continuous Drain (Id) @ 25°C :

4.1A

Published :

2013

Power - Max :

830mW