SI6969DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

TrenchFET®

Mount :

Surface Mount

Height :

1mm

FET Type :

2 P-Channel (Dual)

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

34m Ω @ 4.6A, 4.5V

Pin Count :

8

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Width :

4.4mm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.6A

Power Dissipation :

1.1W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

30A

Number of Channels :

2

Number of Pins :

8

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Turn-Off Delay Time :

80 ns

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Rise Time :

35ns

Turn On Delay Time :

25 ns

Published :

2016

Element Configuration :

Dual

Max Power Dissipation :

1.1W

Drain to Source Voltage (Vdss) :

12V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Base Part Number :

SI6969

JESD-609 Code :

e3

Fall Time (Typ) :

35 ns

Drain-source On Resistance-Max :

0.034Ohm

Length :

3mm

Terminal Form :

Gull wing

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Transistor Element Material :

SILICON

Weight :

157.991892mg

Time@Peak Reflow Temperature-Max (s) :

40