SI6967DQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

30A

Weight :

157.991892mg

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.03Ohm

Max Power Dissipation :

1.1W

Drain Current-Max (Abs) (ID) :

5A

Power Dissipation :

1.1W

Pin Count :

8

Height :

1mm

FET Type :

2 P-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Turn On Delay Time :

20 ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Number of Terminations :

8

Continuous Drain Current (ID) :

5A

Number of Pins :

8

Element Configuration :

Dual

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

8V

Rds On (Max) @ Id, Vgs :

30m Ω @ 5A, 4.5V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

85 ns

Published :

2016

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Width :

4.4mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

30 ns

Gate to Source Voltage (Vgs) :

8V

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Length :

3mm

Rise Time :

30ns

FET Feature :

Logic Level Gate