SI6966EDQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

220 ns

Drain to Source Resistance :

30mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.25W

Power Dissipation :

1.25W

Turn-Off Delay Time :

420 ns

Base Part Number :

SI6966

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

Min Operating Temperature :

-55°C

Weight :

157.991892mg

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

20V

Published :

2016

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Rds On Max :

30 mΩ

Power - Max :

1.25W

Number of Pins :

8

Length :

3mm

Gate to Source Voltage (Vgs) :

12V

Supplier Device Package :

8-TSSOP

Height :

1mm

Element Configuration :

Dual

Continuous Drain Current (ID) :

5.2A

Width :

4.4mm

Rds On (Max) @ Id, Vgs :

30mOhm @ 5.2A, 4.5V

Max Operating Temperature :

150°C

Mounting Type :

Surface Mount

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Number of Elements :

2

Rise Time :

130ns

Turn On Delay Time :

100 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V