SI6963BDQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 P-Channel (Dual)

Packaging :

Tape and Reel (TR)

Drain to Source Resistance :

45mOhm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Power - Max :

830mW

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Rds On (Max) @ Id, Vgs :

45mOhm @ 3.9A, 4.5V

Turn On Delay Time :

33 ns

Rds On Max :

45 mΩ

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

8-TSSOP

Continuous Drain Current (ID) :

-3.9A

Max Operating Temperature :

150°C

Fall Time (Typ) :

57 ns

Element Configuration :

Dual

Rise Time :

57ns

Drain to Source Voltage (Vdss) :

20V

Max Power Dissipation :

830mW

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

3.4A

Power Dissipation :

830mW

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Number of Elements :

2

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Resistance :

45mOhm

Base Part Number :

SI6963

Mount :

Surface Mount

Turn-Off Delay Time :

65 ns

Package / Case :

8-TSSOP (0.173, 4.40mm Width)