SI6955ADQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Rise Time :

9ns

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

21 ns

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

Number of Channels :

2

Continuous Drain Current (ID) :

2.5A

Max Power Dissipation :

830mW

Rds On Max :

80 mΩ

Fall Time (Typ) :

9 ns

Element Configuration :

Dual

Number of Elements :

2

Drain to Source Breakdown Voltage :

-30V

Published :

2016

Mounting Type :

Surface Mount

Mount :

Surface Mount

Power Dissipation :

830mW

Turn On Delay Time :

8 ns

Weight :

157.991892mg

FET Feature :

Logic Level Gate

Drain to Source Resistance :

80mOhm

Supplier Device Package :

8-TSSOP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

830mW

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Max Operating Temperature :

150°C

Number of Pins :

8

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

2.5A

Min Operating Temperature :

-55°C

Rds On (Max) @ Id, Vgs :

80mOhm @ 2.9A, 10V