SI6955ADQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Width :

4.4mm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

-30V

Mounting Type :

Surface Mount

Number of Elements :

2

Power Dissipation :

830mW

Continuous Drain Current (ID) :

2.5A

Max Power Dissipation :

830mW

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Element Configuration :

Dual

Turn On Delay Time :

8 ns

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Fall Time (Typ) :

9 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9ns

FET Type :

2 P-Channel (Dual)

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.9A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Length :

3mm

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

21 ns

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 5V

Height :

1mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Weight :

157.991892mg