SI6954ADQ-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

TrenchFET®

Number of Channels :

2

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Fall Time (Typ) :

10 ns

Mounting Type :

Surface Mount

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

4.4mm

Lead Free :

Lead Free

Rise Time :

10ns

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

23 ns

Threshold Voltage :

1V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Pin Count :

8

Resistance :

53mOhm

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

53m Ω @ 3.4A, 10V

Factory Lead Time :

14 Weeks

Drain Current-Max (Abs) (ID) :

3.1A

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Base Part Number :

SI6954

Nominal Vgs :

1 V

Drain to Source Breakdown Voltage :

30V

Published :

2017

Radiation Hardening :

No

ECCN Code :

EAR99

Mount :

Surface Mount

Weight :

157.991892mg

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Length :

3mm

Transistor Element Material :

SILICON

Height :

1mm

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Terminal Finish :

MATTE TIN

REACH SVHC :

Unknown

Transistor Application :

SWITCHING

Turn On Delay Time :

12 ns

JESD-609 Code :

e3

Continuous Drain Current (ID) :

3.4A

Current - Continuous Drain (Id) @ 25°C :

3.1A

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

830mW

Power Dissipation :

830mW

Operating Mode :

ENHANCEMENT MODE