SI4973DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

10 ns

Number of Terminations :

8

Turn-Off Delay Time :

115 ns

Resistance :

23mOhm

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

5.8A

Transistor Element Material :

SILICON

Mount :

Surface Mount

Max Power Dissipation :

1.1W

Width :

3.9878mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Height :

1.5494mm

Lead Free :

Lead Free

Number of Pins :

8

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.6A, 10V

Rise Time :

15ns

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

90 ns

Continuous Drain Current (ID) :

7.6A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Published :

2009

Nominal Vgs :

-3 V

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

SI4973

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.1W

ECCN Code :

EAR99

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

3V @ 250µA

Length :

4.9784mm

Time@Peak Reflow Temperature-Max (s) :

40