SI4972DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Max Power Dissipation :

2.5W

Number of Channels :

2

Element Configuration :

Dual

Turn-Off Delay Time :

22 ns

Max Operating Temperature :

150°C

Power - Max :

3.1W 2.5W

Mount :

Surface Mount

Input Capacitance :

1.08nF

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

10.8A 7.2A

Length :

5mm

Width :

4mm

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Weight :

506.605978mg

Turn On Delay Time :

108 ns

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

26 ns

Base Part Number :

SI4972

Packaging :

Tape and Reel (TR)

Rds On Max :

14.5 mΩ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Rise Time :

130ns

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

7.2A

Height :

1.5mm

Drain to Source Resistance :

26.5mOhm

Supplier Device Package :

8-SO

Rds On (Max) @ Id, Vgs :

14.5mOhm @ 6A, 10V

Published :

2012