SI4967DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

7.5A

Max Power Dissipation :

2W

Terminal Finish :

PURE MATTE TIN

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Pulsed Drain Current-Max (IDM) :

30A

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Published :

2016

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.5A, 4.5V

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

12V

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

Turn-Off Delay Time :

210 ns

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Element Configuration :

Dual

Number of Elements :

2

Drain-source On Resistance-Max :

0.023Ohm

Turn On Delay Time :

25 ns

Fall Time (Typ) :

95 ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 P-Channel (Dual)

Drain to Source Breakdown Voltage :

-12V

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8