SI4967DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Turn On Delay Time :

25 ns

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Element Configuration :

Dual

Number of Terminations :

8

Radiation Hardening :

No

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

30A

ECCN Code :

EAR99

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Resistance :

23mOhm

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.5A, 4.5V

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

186.993455mg

Width :

4mm

Drain to Source Breakdown Voltage :

-12V

Height :

1.55mm

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Length :

5mm

Max Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Published :

2014

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Number of Elements :

2

Fall Time (Typ) :

95 ns

Turn-Off Delay Time :

210 ns

Rise Time :

40ns

Continuous Drain Current (ID) :

7.5A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Power Dissipation :

2W