SI4965DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Lead Free :

Lead Free

Turn On Delay Time :

35 ns

Power Dissipation :

2W

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Weight :

186.993455mg

Pulsed Drain Current-Max (IDM) :

30A

Rds On (Max) @ Id, Vgs :

21m Ω @ 8A, 4.5V

Radiation Hardening :

No

Width :

4mm

ECCN Code :

EAR99

Fall Time (Typ) :

90 ns

Number of Channels :

2

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

8A

Resistance :

21mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

8A

Drain to Source Breakdown Voltage :

-8V

Series :

TrenchFET®

Terminal Form :

Gull wing

Mount :

Surface Mount

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 4.5V

Published :

2016

Turn-Off Delay Time :

170 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Type :

2 P-Channel (Dual)

Length :

5mm

Number of Pins :

8

Height :

1.55mm

Rise Time :

45ns