SI4963BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

4.9A

Turn On Delay Time :

30 ns

Factory Lead Time :

14 Weeks

Element Configuration :

Dual

Power Dissipation :

1.1W

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

REACH SVHC :

Unknown

Published :

2017

Number of Elements :

2

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-20V

Weight :

186.993455mg

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.4V @ 250μA

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

Drain Current-Max (Abs) (ID) :

4.9A

Width :

4mm

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Number of Pins :

8

Lead Free :

Lead Free

Continuous Drain Current (ID) :

6.5A

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

40ns

Mounting Type :

Surface Mount

Resistance :

32mOhm

Max Power Dissipation :

1.1W

Threshold Voltage :

-600mV

Height :

1.55mm

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

32m Ω @ 6.5A, 4.5V

JESD-609 Code :

e3

Mount :

Surface Mount

Fall Time (Typ) :

40 ns

Turn-Off Delay Time :

80 ns

Terminal Form :

Gull wing

Length :

5mm

FET Feature :

Logic Level Gate

Base Part Number :

SI4963

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V