SI4953ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

10ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.053Ohm

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

30V

Base Part Number :

SI4953

Published :

2014

Number of Terminations :

8

Fall Time (Typ) :

20 ns

Nominal Vgs :

-1 V

Current - Continuous Drain (Id) @ 25°C :

3.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 P-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

-4.9A

Packaging :

Cut Tape (CT)

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

REACH SVHC :

Unknown

Pin Count :

8

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

53m Ω @ 4.9A, 10V

Max Operating Temperature :

150°C

Number of Elements :

2

Turn-Off Delay Time :

40 ns

Terminal Finish :

PURE MATTE TIN

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

3.7A

Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

1.1W

JESD-609 Code :

e3

Threshold Voltage :

-1V

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Element Configuration :

Dual