SI4947ADY-T1-GE3
- Mfr.Part #
- SI4947ADY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 30V 3A 8-SOIC
- Stock
- 33,340
- In Stock :
- 33,340
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pbfree Code :
- yes
- Pin Count :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain Current-Max (Abs) (ID) :
- 3A
- ECCN Code :
- EAR99
- Number of Elements :
- 2
- Terminal Form :
- Gull wing
- Number of Pins :
- 8
- Published :
- 2009
- Continuous Drain Current (ID) :
- -3A
- Element Configuration :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 3A
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2W
- FET Feature :
- Logic Level Gate
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 3.9A, 10V
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 8 ns
- Base Part Number :
- SI4947
- Rise Time :
- 9ns
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 21 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 5V
- Max Power Dissipation :
- 1.2W
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Series :
- TrenchFET®
- Number of Terminations :
- 8
- Terminal Finish :
- Pure Matte Tin (Sn)
- FET Type :
- 2 P-Channel (Dual)
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- SI4947ADY-T1-GE3

SI4947ADY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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