SI4943CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

186.993455mg

Transistor Application :

SWITCHING

Turn On Delay Time :

50 ns

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-8A

Max Power Dissipation :

3.1W

Current - Continuous Drain (Id) @ 25°C :

8A

Power - Max :

3.1W

Height :

1.5mm

Operating Mode :

ENHANCEMENT MODE

Rise Time :

71ns

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1945pF @ 10V

Operating Temperature :

-50°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

19.2m Ω @ 8.3A, 10V

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Terminal Finish :

PURE MATTE TIN

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

JESD-609 Code :

e3

Length :

5mm

Mounting Type :

Surface Mount

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

15 ns

Drain Current-Max (Abs) (ID) :

8A

Number of Channels :

2

Turn-Off Delay Time :

29 ns

Drain to Source Breakdown Voltage :

-20V

Series :

TrenchFET®

ECCN Code :

EAR99

Published :

2016

Base Part Number :

SI4943

Width :

4mm

Number of Terminations :

8

Resistance :

19.2mOhm

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Power Dissipation :

2W

FET Feature :

Logic Level Gate