SI4943BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.4A, 10V

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Mount :

Surface Mount

Power - Max :

1.1W

Number of Pins :

8

FET Type :

2 P-Channel (Dual)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

Published :

2009

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

6.3A

Weight :

186.993455mg

Drain Current-Max (Abs) (ID) :

6.3A

FET Feature :

Logic Level Gate

Turn-Off Delay Time :

94 ns

Element Configuration :

Dual

Mounting Type :

Surface Mount

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

-8.4A

Pin Count :

8

Transistor Element Material :

SILICON

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

30

Max Power Dissipation :

1.1W

ECCN Code :

EAR99

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

32 Weeks

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.019Ohm

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

10 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Pure Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Base Part Number :

SI4943

Threshold Voltage :

-1V