SI4943BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn On Delay Time :

11 ns

Radiation Hardening :

No

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Width :

4mm

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Height :

1.55mm

Power Dissipation :

1.1W

Mount :

Surface Mount

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Resistance :

19mOhm

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6.3A

Number of Elements :

2

Max Power Dissipation :

1.1W

Continuous Drain Current (ID) :

-8.4A

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

Unknown

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs :

-1 V

Published :

2009

Factory Lead Time :

14 Weeks

Base Part Number :

SI4943

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.4A, 10V

JESD-609 Code :

e3

Element Configuration :

Dual

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Rise Time :

10ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

FET Feature :

Logic Level Gate

Number of Terminations :

8

Turn-Off Delay Time :

94 ns

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

6.3A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Drain to Source Breakdown Voltage :

-20V

Length :

5mm

Weight :

186.993455mg