SI4941EDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

11μs

Drain to Source Voltage (Vdss) :

30V

Drain to Source Resistance :

21mOhm

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 P-Channel (Dual)

Number of Pins :

8

Fall Time (Typ) :

24 μs

Supplier Device Package :

8-SO

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Turn-Off Delay Time :

30 µs

Max Operating Temperature :

150°C

Base Part Number :

SI4941

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Min Operating Temperature :

-55°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Channels :

2

Mounting Type :

Surface Mount

Weight :

186.993455mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.55mm

Turn On Delay Time :

5.5 μs

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

10A

Series :

TrenchFET®

Power - Max :

3.6W

Length :

5mm

Packaging :

Tape and Reel (TR)

Width :

4mm

Rds On Max :

21 mΩ

Continuous Drain Current (ID) :

10A

Rds On (Max) @ Id, Vgs :

21mOhm @ 8.3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Max Power Dissipation :

2W