SI4936CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2.3W

Continuous Drain Current (ID) :

5A

Power Dissipation :

2.3W

REACH SVHC :

Unknown

ECCN Code :

EAR99

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Resistance :

40mOhm

Height :

1.55mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

13ns

Number of Elements :

2

Pin Count :

8

Factory Lead Time :

14 Weeks

Published :

2009

Fall Time (Typ) :

13 ns

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Contact Plating :

Tin

Weight :

186.993455mg

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

40m Ω @ 5A, 10V

Width :

4mm

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 15V

Threshold Voltage :

3V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

5.8A

Series :

TrenchFET®

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

5A

Turn-Off Delay Time :

16 ns

FET Feature :

Logic Level Gate

Number of Terminations :

8

Base Part Number :

SI4936