SI4936BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Power Dissipation :

2W

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.55mm

Mounting Type :

Surface Mount

Length :

5mm

Time@Peak Reflow Temperature-Max (s) :

40

Resistance :

35mOhm

Fall Time (Typ) :

25 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 15V

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Published :

2009

Pulsed Drain Current-Max (IDM) :

30A

RoHS Status :

ROHS3 Compliant

Weight :

506.605978mg

Turn-Off Delay Time :

12 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

Number of Terminations :

8

Continuous Drain Current (ID) :

6.9A

Drain to Source Breakdown Voltage :

30V

Number of Elements :

2

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Lead Free :

Lead Free

Element Configuration :

Dual

Nominal Vgs :

3 V

Termination :

SMD/SMT

FET Type :

2 N-Channel (Dual)

Peak Reflow Temperature (Cel) :

260

Width :

4mm

Terminal Finish :

Matte Tin (Sn)

Power - Max :

2.8W

Transistor Element Material :

SILICON

Number of Pins :

8

Factory Lead Time :

14 Weeks

Dual Supply Voltage :

30V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Turn On Delay Time :

5 ns

Pin Count :

8

Base Part Number :

SI4936

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.9A, 10V

Radiation Hardening :

No

Max Power Dissipation :

2W

Rise Time :

25ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING