SI4936ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

FET Type :

2 N-Channel (Dual)

Turn-Off Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

5 ns

Published :

2016

RoHS Status :

ROHS3 Compliant

Width :

4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

4.4A

Current - Continuous Drain (Id) @ 25°C :

4.4A

Rds On Max :

36 mΩ

Max Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Length :

5mm

Turn On Delay Time :

6 ns

Power - Max :

1.1W

Number of Pins :

8

Series :

TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

36mOhm @ 5.9A, 10V

Factory Lead Time :

14 Weeks

Max Operating Temperature :

150°C

FET Feature :

Logic Level Gate

Drain to Source Resistance :

36mOhm

Weight :

506.605978mg

Base Part Number :

SI4936

Height :

1.55mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

14ns

Drain to Source Breakdown Voltage :

30V

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Supplier Device Package :

8-SO