SI4936ADY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

4.4A

Length :

5mm

Power - Max :

1.1W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Drain to Source Resistance :

36mOhm

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

36mOhm @ 5.9A, 10V

Number of Elements :

2

Nominal Vgs :

1 V

Power Dissipation :

1.1W

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Continuous Drain Current (ID) :

5.9A

Series :

TrenchFET®

Fall Time (Typ) :

14 ns

FET Type :

2 N-Channel (Dual)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Weight :

506.605978mg

Rise Time :

14ns

Rds On Max :

65 mΩ

Supplier Device Package :

8-SO

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Max Power Dissipation :

3.12W

Factory Lead Time :

14 Weeks

Published :

2004

Radiation Hardening :

No

Number of Channels :

2

Turn-Off Delay Time :

30 ns

Max Operating Temperature :

150°C

Resistance :

36mOhm

REACH SVHC :

Unknown

Drain to Source Breakdown Voltage :

30V

Base Part Number :

SI4936

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

6 ns

Input Capacitance :

220pF