SI4933DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Turn-Off Delay Time :

320 ns

Base Part Number :

SI4933

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Number of Terminations :

8

Terminal Form :

Gull wing

Turn On Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Max Power Dissipation :

1.1W

Fall Time (Typ) :

260 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 9.8A, 4.5V

Number of Elements :

2

Rise Time :

47ns

Series :

TrenchFET®

Continuous Drain Current (ID) :

-7.4A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

PURE MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

7.4A

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

12V

Vgs(th) (Max) @ Id :

1V @ 500µA

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.014Ohm

Transistor Element Material :

SILICON

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2016

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.1W

Element Configuration :

Dual