SI4933DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 4.5V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

12V

Max Power Dissipation :

1.1W

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

8V

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Threshold Voltage :

400mV

Drain-source On Resistance-Max :

0.014Ohm

Rise Time :

47ns

Continuous Drain Current (ID) :

7.4A

Mounting Type :

Surface Mount

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

14m Ω @ 9.8A, 4.5V

Turn-Off Delay Time :

320 ns

REACH SVHC :

No SVHC

Number of Pins :

8

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

12V

Pin Count :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Base Part Number :

SI4933

Published :

2009

Vgs(th) (Max) @ Id :

1V @ 500µA

Fall Time (Typ) :

47 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Power Dissipation :

1.1W

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

35 ns

Pbfree Code :

yes

FET Feature :

Logic Level Gate