SI4925BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Base Part Number :

SI4925

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

Turn On Delay Time :

9 ns

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Terminal Finish :

PURE MATTE TIN

Max Power Dissipation :

1.1W

Weight :

186.993455mg

Drain to Source Breakdown Voltage :

-30V

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

25m Ω @ 7.1A, 10V

Continuous Drain Current (ID) :

-5.3A

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Pin Count :

8

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

FET Type :

2 P-Channel (Dual)

Current - Continuous Drain (Id) @ 25°C :

5.3A

Number of Channels :

2

Transistor Element Material :

SILICON

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

12ns

Turn-Off Delay Time :

60 ns

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ