SI4923DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

6.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

21m Ω @ 8.3A, 10V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

FET Feature :

Logic Level Gate

Power Dissipation :

1.1W

Transistor Element Material :

SILICON

Pin Count :

8

ECCN Code :

EAR99

Fall Time (Typ) :

80 ns

Published :

2016

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

135 ns

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Drain-source On Resistance-Max :

0.021Ohm

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Rise Time :

10ns

Number of Elements :

2

FET Type :

2 P-Channel (Dual)

Mount :

Surface Mount

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Pbfree Code :

yes

Transistor Application :

SWITCHING

Max Power Dissipation :

1.1W

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

30