SI4922BDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

68 ns

Nominal Vgs :

1.8 V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

8A

Factory Lead Time :

14 Weeks

FET Type :

2 N-Channel (Dual)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Base Part Number :

SI4922

Weight :

186.993455mg

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Number of Pins :

8

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Length :

5mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

2W

Fall Time (Typ) :

54 ns

Rise Time :

53ns

Height :

1.55mm

Number of Channels :

2

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 15V

Published :

2011

Continuous Drain Current (ID) :

8A

Number of Elements :

2

Terminal Finish :

PURE MATTE TIN

FET Feature :

Standard

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Width :

4mm

Rds On (Max) @ Id, Vgs :

16m Ω @ 5A, 10V

DS Breakdown Voltage-Min :

30V

Max Power Dissipation :

2W

Series :

TrenchFET®

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power - Max :

3.1W

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pin Count :

8