SI4922BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

186.993455mg

Published :

2017

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30V

Number of Channels :

2

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Threshold Voltage :

1.8V

Vgs(th) (Max) @ Id :

1.8V @ 250μA

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Height :

1.55mm

Number of Terminations :

8

Turn-Off Delay Time :

68 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

8A

Factory Lead Time :

14 Weeks

Number of Elements :

2

Element Configuration :

Dual

Power Dissipation :

2W

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

8A

Fall Time (Typ) :

54 ns

Resistance :

16mOhm

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn On Delay Time :

13 ns

Series :

TrenchFET®

Rise Time :

53ns

Power - Max :

3.1W

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 15V

Rds On (Max) @ Id, Vgs :

16m Ω @ 5A, 10V

Mount :

Surface Mount

Pbfree Code :

yes

REACH SVHC :

Unknown

FET Feature :

Standard

Number of Pins :

8

Base Part Number :

SI4922

Pin Count :

8

Contact Plating :

Tin

ECCN Code :

EAR99

Width :

4mm

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Length :

5mm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Radiation Hardening :

No