SI4834CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Base Part Number :

SI4834

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Number of Terminations :

8

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Pins :

8

Pin Count :

8

FET Feature :

Standard

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2.9W

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Turn On Delay Time :

17 ns

Factory Lead Time :

15 Weeks

DS Breakdown Voltage-Min :

30V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

Vgs(th) (Max) @ Id :

3V @ 1mA

Published :

2016

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Surface Mount

Series :

TrenchFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7.5A

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Rise Time :

12ns

Number of Elements :

2

Terminal Finish :

PURE MATTE TIN

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)