SI4834BDY-T1-GE3
- Mfr.Part #
- SI4834BDY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 5.7A 8-SOIC
- Stock
- 16,262
- In Stock :
- 16,262
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 5.7A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Drain to Source Resistance :
- 22mOhm
- Max Power Dissipation :
- 1.1W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mounting Type :
- Surface Mount
- Series :
- TrenchFET®
- Length :
- 5mm
- Base Part Number :
- SI4834
- FET Feature :
- Logic Level Gate
- Rds On Max :
- 22 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- 2 N-Channel (Dual)
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 22mOhm @ 7.5A, 10V
- Supplier Device Package :
- 8-SO
- Number of Channels :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 1.1W
- Max Operating Temperature :
- 150°C
- Height :
- 1.55mm
- Turn On Delay Time :
- 9 ns
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 9 ns
- Min Operating Temperature :
- -55°C
- Published :
- 2012
- Rise Time :
- 10ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4mm
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 4.5V
- Turn-Off Delay Time :
- 19 ns
- Weight :
- 186.993455mg
- Datasheets
- SI4834BDY-T1-GE3

SI4834BDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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