SI4834BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

2

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

30V

Base Part Number :

SI4834

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

19 ns

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

5.7A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

9 ns

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Published :

2016

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

Max Power Dissipation :

1.1W

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

10ns

Fall Time (Typ) :

10 ns

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pin Count :

8

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Number of Elements :

2

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Weight :

186.993455mg

Mount :

Surface Mount

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Length :

5mm

Width :

4mm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR