SI4830CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Half Bridge)

Drain to Source Breakdown Voltage :

30V

JESD-609 Code :

e3

Turn On Delay Time :

17 ns

Length :

4.9784mm

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Resistance :

20mOhm

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

8A

Rise Time :

12ns

Transistor Application :

SWITCHING

REACH SVHC :

Unknown

FET Feature :

Logic Level Gate

Weight :

506.605978mg

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Base Part Number :

SI4830

Number of Elements :

2

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

19 ns

Number of Pins :

8

Fall Time (Typ) :

10 ns

Width :

3.9878mm

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 1mA

ECCN Code :

EAR99

Power Dissipation :

2W

Height :

1.5494mm

Series :

LITTLE FOOT®

Max Power Dissipation :

2.9W

Continuous Drain Current (ID) :

7.5A

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Published :

2013

Radiation Hardening :

No

Pin Count :

8

Threshold Voltage :

1V