SI4830CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

7.5A

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Base Part Number :

SI4830

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Number of Elements :

2

Max Power Dissipation :

2.9W

Series :

LITTLE FOOT®

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 1mA

Continuous Drain Current (ID) :

8A

ECCN Code :

EAR99

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Turn-Off Delay Time :

18 ns

Weight :

506.605978mg

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

Height :

1.55mm

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Half Bridge)

Width :

4mm

Fall Time (Typ) :

12 ns

Published :

2012

Number of Pins :

8

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

12ns

FET Feature :

Logic Level Gate

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

15 Weeks

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

PURE MATTE TIN

Turn On Delay Time :

17 ns

Operating Mode :

ENHANCEMENT MODE