SI4816DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Pure Matte Tin (Sn)

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Base Part Number :

SI4816

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

FET Type :

2 N-Channel (Half Bridge)

Rise Time :

5ns

Drain Current-Max (Abs) (ID) :

5.3A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Series :

LITTLE FOOT®

ECCN Code :

EAR99

Pin Count :

8

Terminal Form :

Gull wing

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

7.7A

Configuration :

COMPLEX

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

1W 1.25W

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

22m Ω @ 6.3A, 10V

Number of Elements :

2

Radiation Hardening :

No

Published :

2009

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

5.3A 7.7A

Power Dissipation :

1.25W

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

30V

Max Power Dissipation :

1.25W

Drain-source On Resistance-Max :

0.022Ohm

Mounting Type :

Surface Mount